aug2011version1.1 magnachipsemiconductorltd . 1 MDF11N65Bnchannelmosfet650v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 650 v gatesourcevoltage v gss 30 v continuousdraincurrent t c =25 o c i d 12* a t c =100 o c 7.7* a pulseddraincurrent (1) i dm 48* a powerdissipation t c =25 o c p d 49.6 w derateabove25 o c 0.4 w/ o c repetitiveavalancheenergy (1) e ar 18.1 mj peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 750 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c *idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 62.5 o c/w thermalresistance,junctiontocase (1) r jc 2.52 MDF11N65B nchannelmosfet650v,12a,0.65 generaldescription these nchannel mosfet are produced using advanced magnachips mosfet technology, which provides low on state resistance, high switching performance and excellen t quality. these devices are suitable device for smps, high speed switchingandgeneralpurposeapplications. features v ds =650v i d =12a @v gs =10v r ds(on) 0.65 @v gs =10v applications powersupply pfc highcurrent,highspeedswitching d g s to220f mdfseries
aug2011version1.1 magnachipsemiconductorltd . 2 MDF11N65Bnchannelmosfet650v orderinginformation partnumber temp.range package packing rohsstatus MDF11N65Bth 55~150 o c to220f tube halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 650 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 draincutoffcurrent i dss v ds =650v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =6a 0.55 0.65 forwardtransconductance g fs v ds =30v,i d =6a 8.7 s dynamiccharacteristics totalgatecharge q g v ds =520v,i d =12.0a,v gs =10v (3) 31 nc gatesourcecharge q gs 9.2 gatedraincharge q gd 12.6 inputcapacitance c iss v ds =25v,v gs =0v,f=1.0mhz 1650 pf reversetransfercapacitance c rss 7.7 outputcapacitance c oss 180 turnondelaytime t d(on) v gs =10v,v ds =325v,i d =12.0a, r g =25 (3) 27 ns risetime t r 52 turnoffdelaytime t d(off) 132 falltime t f 48 drainsourcebodydiodecharacteristics maximumcontinuousdrainto sourcediodeforwardcurrent i s 12 a sourcedraindiodeforwardvoltage v sd i s =12.0a,v gs =0v 1.4 v bodydiodereverserecoverytime t rr i f =12.0a,di/dt=100a/s 355 ns bodydiodereverserecoverycharge q rr 3.6 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150c. 2.pulsetest:pulsewidth 300us,dutycycle 2%,pulsewidthlimitedbyjunctiontemperaturet j(max) =150 c. 3. i sd 12.0a,di/dt 200a/us,v dd bvdss,r g =25,startingt j =25 c 4.l=9.62mh, i as =12.0a, v dd =50v,r g =25,startingt j =25 c,
aug2011version1.1 magnachipsemiconductorltd . 3 MDF11N65Bnchannelmosfet650v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2onresistancevariationwith draincurrentandgatevoltage fig.3onresistancevariationwith temperature fig.4 breakdown voltage variation vs. temperature fig.6 body diode forward voltage variation with source current and temperature 50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 4 5 6 7 8 1 10 55 25 150 *notes; 1.vds=30v i d (a) v gs [v] 0.4 0.6 0.8 1.0 1.2 1 10 25 150 notes: 1.v gs =0v 2.250 spulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =6a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0 5 10 15 0 4 8 12 16 20 notes 1.250 ? ?? ? pulsetest 2.t c =25 v gs =4.5v =5.0v =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 2 4 6 8 10 12 14 16 18 20 0.50 0.55 0.60 0.65 0.70 0.75 0.80 v gs =10.0v v gs =20v r ds(on) [ ] i d ,draincurrent[a]
aug2011version1.1 magnachipsemiconductorltd . 4 MDF11N65Bnchannelmosfet650v fig.7gatechargecharacteristics fig.8capacitancecharacteristics 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 0 2 4 6 8 10 130v 325v 520v note:i d =12.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] fig.10transientthermalresponsecurve 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =2.52 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] fig.9maximumsafeoperatingarea 1e5 1e4 1e3 0.01 0.1 1 10 0 1000 2000 3000 4000 5000 6000 singlepulse r thjc =2.52 /w t c =25 power(w) pulsewidth(s) fig.11singlepulsemaximumpower dissipation fig.12 maximum drain current vs. case temperature 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 1 10 0 400 800 1200 1600 2000 2400 2800 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 i d ,draincurrent[a] t c ,casetemperature[ ]
aug2011version1.1 magnachipsemiconductorltd . 5 MDF11N65Bnchannelmosfet650v physicaldimensions 3leads,to220f dimensionsareinmillimetersunlessotherwisespec ified s y mbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q 1 3.10 3.50 r 3.00 3.55
aug2011version1.1 magnachipsemiconductorltd . 6 MDF11N65Bnchannelmosfet650v disclaimer: theproductsarenotdesignedforuseinhostileenvironm ents,including,withoutlimitation,aircraft,nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers custome rs using or selling sellers products for use in such applicationsdosoattheirownriskandagreetofully defendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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